Physical origins of fine structure in the resonant tunneling through laterally confined 1D-0D-1D structures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1966-1969

  Csontos, Dan ^a   Xu, Hongqi ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

1d 0d 1d system; I V characteristics; Resonant tunneling; Scattering matrix method

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD VOLTAGE;

SCATTERING-MATRIX METHOD;

RESONANT TUNNELING;

EID: 0035267594     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1966     Document Type: Article

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15. -15 F for d = 50 nm. This yields charging energies in the range of 0.06-0.24 meV, which are much smaller than the size quantization energies. Note that our estimation of the capacitance has been made for an experimentally relevant, three-dimensional vertical device structure. This should not be confused with the theoretical model considered in this work, in which a two-dimensional device structure is studied in order to reduce the demands on the computational power.