Transmission and I-V characteristics of laterally-confined resonant tunneling structures

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 201-210

  Csontos, D ^a   Xu, H Q ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

RESONANT TUNNELING STRUCTURE; SCATTERING MATRIX METHOD;

ELECTRON TUNNELING;

EID: 0033718749     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00477-3     Document Type: Article

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