Residual strain and texture in strontium-doped lanthanum manganite thin films

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 3, 2001, Pages 143-146

  Meda, L ^a   Bacaltchuk, C ^a   Garmestani, H ^a   Dahmen, K H ^b  

^a FAMU FSU COLLEGE OF ENGINEERING   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; STRAIN; STRESS ANALYSIS; TEXTURES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH; RESIDUAL STRAIN; STRONTIUM DOPED LANTHANUM MANGANITE;

LANTHANUM COMPOUNDS;

EID: 0035266326     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011224630332     Document Type: Article

References (15)

1. Residual stress: Measurement by diffraction and interpretation