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Volumn 171, Issue 1-2, 2001, Pages 71-81
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Aluminum chemical vapor deposition reaction of dimethylaluminum hydride on TiN studied by X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry
c
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
ALUMINUM COMPOUNDS;
CHEMICAL VAPOR DEPOSITION;
DEPOSITION;
HYDRIDES;
MORPHOLOGY;
NUCLEATION;
OXIDATION;
REDUCTION;
SECONDARY ION MASS SPECTROMETRY;
TITANIUM NITRIDE;
X RAY PHOTOELECTRON SPECTROSCOPY;
DIMETHYLALUMINUM HYDRIDE;
METALLIC FILMS;
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EID: 0035253985
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(00)00542-0 Document Type: Article |
Times cited : (10)
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References (21)
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