Correlation between light-induced degradation and structural inhomogeneities in hydrogenated amorphous silicon prepared under high-rate deposition conditions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 432-434

  Sakikawa, Nobuki ^a   Tamao, Masaki ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Hydrogenated amorphous silicon; Light induced degradation; Plasma enhanced chemical vapor deposition; Small angle X ray scattering; Structural fluctuation; Structural inhomogeneity

Indexed keywords

CATHODES; CHEMICAL VAPOR DEPOSITION; ELECTROMAGNETIC WAVE SCATTERING; HYDROGEN BONDS; HYDROGENATION; PHOTOLYSIS; PLASMA APPLICATIONS; X RAY ANALYSIS;

SMALL ANGLE X RAY SCATTERING (SAXS) ANALYSIS;

AMORPHOUS SILICON;

EID: 0031999692     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.432     Document Type: Article

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