Polysilicon thin film transistors fabricated at 100 °C on a flexible plastic substrate

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 58-59

  Carey, P G ^a   Smith, P M ^a   Thompson, M O ^a   Sigmon, T W ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; EXCIMER LASERS; MASKS; MATHEMATICAL MODELS; PLASTIC FILMS; POLYETHYLENE TEREPHTHALATES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SUBSTRATES;

GAS IMMERSION LASER DOPING (GILD); PIXEL FABRICATION; POLYSILICON;

THIN FILM TRANSISTORS;

EID: 0030651041     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)