Applications of tetrahedral amorphous carbon in limited volatility memory and in field programmable gate arrays

Diamond and Related Materials

Volumn 10, Issue 2, 2001, Pages 230-233

  McKenzie, D R ^a   Li, W T ^a   Gerstner, E G ^c   Merchant, A ^b   McCulloch, D G ^b   Marks, N A ^a   Bilek, M M ^a  

^a UNIVERSITY OF SYDNEY   (Australia)

^b RMIT UNIVERSITY   (Australia)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Amorphous carbon; Gate arrays; Tetrahedral

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS SILICON; BONDING; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY;

VOLATILITY;

DIAMONDS;

CARBON; ELECTRICAL CONDUCTIVITY;

EID: 0035248332     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00472-6     Document Type: Article

References (7)