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Volumn 40, Issue 2 A, 2001, Pages

Band alignment of molecular-beam-epitaxy-grown GaS/GaAs structure using a single [(t-Bu)GaS]4 precursor

Author keywords

Band alignment; Band discontinuity; GaAs; Gallium sulfide; GaS; Surface passivationa; (T Bu)GaS 4

Indexed keywords

BAND STRUCTURE; ELLIPSOMETRY; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0035247842     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.L104     Document Type: Article
Times cited : (7)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.