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Volumn 40, Issue 2 A, 2001, Pages
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Band alignment of molecular-beam-epitaxy-grown GaS/GaAs structure using a single [(t-Bu)GaS]4 precursor
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Author keywords
Band alignment; Band discontinuity; GaAs; Gallium sulfide; GaS; Surface passivationa; (T Bu)GaS 4
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Indexed keywords
BAND STRUCTURE;
ELLIPSOMETRY;
FILM GROWTH;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTOR GROWTH;
THERMAL EFFECTS;
X RAY PHOTOELECTRON SPECTROSCOPY;
SINGLE PRECURSORS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0035247842
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.40.L104 Document Type: Article |
Times cited : (7)
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References (11)
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