Defect analysis of n-type silicon strained layers

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 225-227

  Simoen, E ^a   Loo, R ^a   Roussel, P ^a   Caymax, M ^a   Bender, H ^a   Claeys, C ^a   Herzog, H J ^b   Blondeel, A ^c   Clauws, P ^c  

^a IMEC   (Belgium)

^b DAIMLER AG   (Germany)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

SILICON GERMANIDE;

HETEROJUNCTIONS;

EID: 0035247615     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00144-X     Document Type: Article

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