Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 301-303

  Blondeel, A ^a   Clauws, P ^a   Depuydt, B ^b  

^a GHENT UNIVERSITY   (Belgium)

^b Union Miniere Research   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PASSIVATION; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SUBSTRATES;

CHEMICAL SURFACE PASSIVATION; PHOTOCONDUCTIVE DECAY MEASUREMENTS (PCD);

SOLAR CELLS;

EID: 0035246932     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00111-6     Document Type: Article

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