Influence of one monolayer thickness variation in GaAs/AlGaAs five-layer asymmetric coupled quantum well upon electrorefractive index change

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 656-661

  Tada, K ^a   Arakawa, T ^a   Kazuma, K ^a   Kurosawa, N ^a   Noh, J H ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Electroabsorptive effect; Electrorefractive effect; Five layer asymmetric coupled quantum well (FACQW); Influence of thickness fluctuation; Optical modulator; Optical switch; Quantum confined Stark effect; Quantum well; Thickness fluctuation

Indexed keywords

LIGHT MODULATORS; NUMERICAL METHODS; OPTICAL SWITCHES; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTROABSORPTIVE EFFECT; ELECTROREFRACTIVE EFFECT; FIVE-LAYER ASYMMETRIC COUPLED QUANTUM WELL; QUANTUM CONFINED STARK EFFECT; THICKNES FLUCTUATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035246527     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.656     Document Type: Article

References (15)