Wide-wavelength polarization-independent optical modulator based on tensile-strained quantum well with mass-dependent width

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 785-787

  Kato, Masaki ^a   Tada, Kunio ^a,b   Nakano, Yoshiaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT MODULATION; LIGHT POLARIZATION; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

MASS DEPENDENT WIDTH; MULTIQUANTUM WELL; TENSILE STRAIN;

LIGHT MODULATORS;

EID: 0030167904     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502094     Document Type: Article

References (8)

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3. J. E. Zucker, K. L. Jones, T. H. Chiu, B. Tell, and K. Brown-Goebeler, "Strained quantum wells for polarization-independent electrooptic wave-guide switches," J. Lightwave Technol., vol. 10, pp. 1926-1930, 1992.
4. K. G. Ravikumar, T. Aizawa, and R. Yamaguchi, "Polarization-independent field-induced absorption-coefficient variation spectrum in an InGaAs/InP tensile-strained quantum well," IEEE Photon. Technol. Lett., vol. 5, pp. 310-312, 1993.
5. Y. C. Chan and K. Tada, "Realization of tensile strain on GaAs substrates for polarization independent optical modulation," IEEE Photon. Technol Lett., vol. 5, pp. 1380-1383, 1993.
6. 1-xAs/GaAs multiple quantum well optical modulators for the 1.02-1.07 μm wavelength range," Appl Phys. Lett., vol. 57, pp. 548-550, 1990.
7. T. Ishikawa, S. Nishimura, and K. Tada, "Quantum-confined Stark effect in a parabolic-potential quantum well," Jpn. J. Appl Phys., vol. 29, pp. 1466-1473, 1990.
8. K. H. Chang, R. Gibara, and D. J. Strolovitz, "Crosshatched surface morphology in strained III-V semiconductor films," J. Appl. Phys., vol. 67, pp. 4093-4098, 1990.