Anomalous sharp dip of large field-induced refractive index change in GaAs/AlGaAs five-layer asymmetric coupled quantum well

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6329-6333

  Arakawa, Taro ^a   Tada, Kunio ^a   Kurosawa, Naoki ^a   Noh, Joo Hyong ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; GROUND STATE; LIGHT ABSORPTION; LIGHT MODULATORS; OPTICAL SWITCHES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; ELECTROREFRACTIVE INDEX; FIVE-LAYER ASYMMETRIC COUPLED QUANTUM WELLS (FACQW); QUANTUM CONFINED STARK EFFECT; WAVEFUNCTION OVERLAP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034318575     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6329     Document Type: Article

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