Effect of crystal orientation on dielectric properties of lead zirconium titanate thin films prepared by reactive RF-sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 713-717

  Kalpat, Sriram ^a   Du, X ^a   Abothu, Issac R ^b   Akiba, Akira ^c   Goto, Hiroshi ^c   Uchino, Kenji ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c OMRON CORPORATION   (Japan)

Author keywords

Atomic force microscopy; Coercive field; Composition; Dielectric constant; Domains; Highly oriented films; Magnetron sputtering; Polarization; PZT

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DIELECTRIC PROPERTIES OF SOLIDS; MAGNETRON SPUTTERING; PERMITTIVITY; RAPID THERMAL ANNEALING; SEMICONDUCTING LEAD COMPOUNDS;

COERCIVE FIELD; LEAD ZIRCONIUM TITANATE;

THIN FILMS;

EID: 0035246288     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.713     Document Type: Article

References (8)