Highly oriented pb(zr, ti)o3 thin films prepared by pulsed laser ablation on gaas and si substrates with mgo buffer layer

Japanese Journal of Applied Physics

Volumn 34, Issue 9, 1995, Pages 5154-5157

  Masuda, Atsushi ^a   Morimoto, Akiharu ^a   Shimizu, Tatsuo ^a   Yamanaka, Yasuhiro ^a   Yonezawa, Yasuto ^b  

^a KANAZAWA UNIVERSITY   (Japan)

^b INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

Author keywords

Depth profile; Ferroelectric hysteresis loop; Gaas substrate; Metal ferroelectric semiconductor field effect transistor(mfs fet); MgO buffer layer; Pb(zr, ti)o3(pzt) thin films; Pulsed laser ablation(pla); Si substrate; 100 orientation

Indexed keywords

CRYSTAL ORIENTATION; FILM PREPARATION; INTERFACES (MATERIALS); LASER ABLATION; LEAD COMPOUNDS; MAGNESIA; PEROVSKITE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THIN FILMS; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFER LAYERS; DEPTH PROFILE; FERROELECTRIC HYSTERESIS LOOP; LEAD ZIRCONATE TITANATE THIN FILMS; METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFS FETS);

FERROELECTRIC MATERIALS;

EID: 0029370184     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.5154     Document Type: Article

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