Dielectric properties of nanocrystalline A1N with respect to its crystal chemistry

International Journal of Inorganic Materials

Volumn 3, Issue 8, 2001, Pages 1311-1313

  Olszyna, A R ^a   Sokolowska A ^a   Szmidt, J ^b   Werbowy, A ^b   Bakowski M ^c  

^a Materials Science and Engineering Faculty   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c NONE

Author keywords

A1N SiC junction; Aluminium nitride; Nanocrystalline structure

Indexed keywords

ALUMINUM NITRIDE; SILICON CARBIDE; UNCLASSIFIED DRUG;

CONFERENCE PAPER; CRYSTAL STRUCTURE; DIELECTRIC CONSTANT; DRY DEPOSITION; NANOPARTICLE; STRUCTURE ANALYSIS;

EID: 0035215047     PISSN: 14666049     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1466-6049(01)00147-7     Document Type: Conference Paper

References (7)

1. Nanocrystalline wide band gap nitrides for electronics