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Volumn , Issue , 2001, Pages 187-190

Novel thin film polymer foaming technique for low and ultra low-k dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMERS; FILM PREPARATION; FOAMED PLASTICS; NUCLEATION; PERMITTIVITY; PLASTIC FILMS; POROSITY; QUENCHING; SCANNING ELECTRON MICROSCOPY; SUPERCONDUCTING TRANSITION TEMPERATURE; SYNTHESIS (CHEMICAL);

EID: 0035204750     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (10)
  • 7
    • 0032934023 scopus 로고    scopus 로고
    • Preparation of low density poly(methylsilsesquioxane)s for LSI interlayer dielectrics with low dielectric constant. Fabrication of Angstrom size pores prepared by baking trifluoropropylsilyl copolymers
    • (1999) J. Mater. Chem. , vol.9 , pp. 591-598
    • Mikoshiba, S.1    Hayase, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.