Sensitivity and reliability evaluation for mixed-signal ICs under electromigration and hot-carrier effects

IEEE International Workshop on Defect and Fault Tolerance in VLSI Systems

Volumn , Issue , 2001, Pages 323-328

  Xuan, X ^a   Chatterjee, A ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ELECTROMIGRATION; HOT CARRIERS; RELIABILITY;

ELECTRICAL STRESS FACTORS; HOT-CARRIER EFFECTS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0035202386     PISSN: 10636722     EISSN: None     Source Type: Journal    
DOI: 10.1109/DFTVS.2001.966785     Document Type: Article

References (11)

1. Electromigration: A review
2. Test and reliability: Partners in IC manufacturing
3. Surface electromigration in copper interconnects
4. Electromigration in thin film conductors
5. Lateral distribution of hot-carrier-induced traps in MOSFET's
6. The relationship between oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's
7. Modeling and simulation of hot electron effects for VLSI reliability
8. Simulation of hot-electron trapping and aging of nMOSFET's
9. Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation