Simulation of Hot-Electron Trapping and Aging of nMOSFET's

IEEE Transactions on Electron Devices

Volumn 35, Issue 12, 1988, Pages 2229-2237

  Roblin, Patrick ^a   Samman, Amer ^a   Bibyk, Steven ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR MATERIALS--AGING;

DRAIN VOLTAGES; HOT ELECTRON TRAPPING; LIFE ESTIMATION; NMOSFET; NORMAL BIASING CONDITIONS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024125950     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.8797     Document Type: Article

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