Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 95-103

  Schumacher, Jürgen O ^a   Altermatt, Pietro P ^b   Heiser, Gernot ^b   Aberle, Armin G ^b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELDS; HETEROJUNCTIONS; PHOSPHORUS; PHOTOCONDUCTIVITY; PROBABILITY DISTRIBUTIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BAND GAP NARROWING; BOLTZMANN STATISTICS; DEGENERACY; HEAVILY DOPED SILICON;

SILICON SOLAR CELLS;

EID: 0035194666     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00082-9     Document Type: Article

References (12)

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