X-ray diffraction study of composition inhomogeneities in Ga1-xInxN thin layers

Crystal Research and Technology

Volumn 36, Issue 8-10, 2001, Pages 903-910

  Zielinska Rohozinska, E ^a   Gronkowski, J ^a   Regulska, M ^a   Majer, M ^a   Pakula, K ^a  

^a UNIVERSITY OF WARSAW   (Poland)

Author keywords

High resolution X ray diffraction; InGaN layers

Indexed keywords

COMPOSITION EFFECTS; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COMPOSITIONAL INHOMOGENEITIES;

THIN FILMS;

EID: 0035181622     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200110)36:8/10<903::AID-CRAT903>3.0.CO;2-V     Document Type: Conference Paper

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