A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 45-48

  Yoon, S W ^a   Lee, C H ^a   Kim, M G ^a   Kim, C H ^a   Lee, J ^a   Laskar, J ^a   Hong, S ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

PHASE NOISE;

OSCILLATORS (ELECTRONIC);

EID: 0035170795     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Phase noise up-conversion reduction for integrated CMOS VCOs
2. 6.8GHz monolithic oscillator fabricated by 0.35μm CMOS technology
3. A 6.5GHz monolithic CMOS voltage-controlled-oscillator
4. A low-voltage 6-GHZ-band CMOS monolithic LC-tank VCO using a tunning-range switching technique
5. A 2.6GHz/5.2GHz CMOS voltage-controlled-oscillator
6. A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT Technology for 5-GHz wireless LAN applications
7. A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications
8. A 5GHz fully integrated VCO in a SiGe bipolar technology