Development of photo-resist stripping process using ozone and water vapor

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2001, Pages 233-236

  Noda, Seiji ^a   Miyamoto, Makoto ^a   Horibe, Hideo ^a   Oya, Izumi ^a   Kuzumoto, Masaki ^a   Kataoka, Tatsuo ^a,b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b SPC electronics corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OZONE; PHOTORESISTORS;

PHOTO-RESIST STRIPPING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035163424     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ISSM.2001.962956     Document Type: Article

References (11)

1. Dynamics of mass transfer on a wafer surface in ozonated-water processing for photoresist removal
2. Ozone processing, the way to go for resist and residue removal
3. Temperature and concentration effects on ozone ashing of photoresist
4. Effect of gas addition on ozone ashing
5. Resist stripping technology using high concentration of ozone
6. Oxidation of benzene by ozone in aqueous solutions
7. A kinetic study of ozone-phennol reaction in aqueous solutions
8. Oxidation of aminodinitrotoluenes with ozone: Products and pathways
9. Ozonization of organic compounds. VI. Relative reactivity of Protic solvents toward Carbonyl oxide