Temperature and concentration effects on ozone ashing of photoresist

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1409-1412

  Gardner, W L ^a   Baddorf, A P ^a   Holber, W M ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b Applied Science and Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS BEHAVIORS; CERAMIC HEATERS; COATED SAMPLE; CONCENTRATION EFFECTS; IN-SITU; LINEAR FUNCTIONS; MASS DENSITIES; MASS FRACTION; OZONE ASHING; OZONE CONCENTRATION; OZONE-OXYGEN MIXTURE; PHOTORESIST REMOVAL; RATE MODELS; RATE-LIMITING STEPS; REMOVAL RATE; RESIST REMOVAL; SINGLE CRYSTAL SILICON; SUBSTRATE TEMPERATURE; TEMPERATURE INFORMATION; TEMPERATURE RANGE; THERMAL DISSOCIATION;

ACTIVATION ENERGY; ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; CONCENTRATION (PROCESS); DISSOCIATION; LASER INTERFEROMETRY; OZONE; RATE CONSTANTS;

PHOTORESISTS;

EID: 78649973262     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580551     Document Type: Article

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