SSPAs & TWTAs: An evolutive situation for electronic warfare applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 149-152

  Murgadella, F ^a   Payen, F ^a   Coulon, P ^a  

^a Delegation Generale pour l'Armement   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

TRAVELLING WAVE TUBE AMPLIFIERS (TWTA);

ELECTRONIC WARFARE;

EID: 0035162911     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A 2W, high efficiency, 2-8 GHz, cascode HBT MMIC power distributed amplifier
2. Les tubes et les MPM appliqués aux besoins des systèmes de brouillage et d'autoprotection
3. A compact 6 to 18 GHz power amplifier module with 10 W output power
4. Progress and prospects on wide bandgap GaN and SiC for high frequency applications
5. 1-8 GHz GaN-based power amplifier using flip-chip bonding