|
|
|
Volumn , Issue , 1996, Pages 96-97
|
|
Suppression of threshold voltage variation in MTCMOS/SIMOX circuit operating below 0.5 V
a
a
NTT CORPORATION
(Japan)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ELECTRIC BREAKDOWN;
ELECTRIC CURRENTS;
ION IMPLANTATION;
LOGIC GATES;
MOSFET DEVICES;
OXIDES;
PERFORMANCE;
POWER ELECTRONICS;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
VOLTAGE CONTROL;
BURIED OXIDE LAYER;
CURRENT DRIVABILITY;
GATE DELAY TIME;
INTERNAL THERMAL OXIDATION;
POWER SWITCH TRANSISTORS;
SUPPLY VOLTAGE FLUCTUATION;
THRESHOLD VOLTAGE VARIATION;
CMOS INTEGRATED CIRCUITS;
|
|
EID: 0029712745
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (5)
|
|
References (3)
|
