Multi-cell circuit model for high-power thyristor-type semiconductor devices

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2001, Pages 1516-1520

  Schroder S ^a   Detjen, D ^a   De Doncker, R W ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; SEMICONDUCTOR DEVICE MODELS; THYRISTORS;

INTEGRATED GATE COMMUTATED THYRISTOR; MULTI-CELL CIRCUIT MODEL; NON-UNIFORM CURRENT DISTRIBUTION; TRANSIENT THERMAL MODEL;

ELECTRIC NETWORK SYNTHESIS;

EID: 0035153008     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. A unified diode model for circuit simulation
2. A new and accurate circuit-modeling approach for the power-diode
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5. Physically based models of high power semiconductor devices for PSpice
6. Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level
7. Physically based models of high power semiconductor devices including transient thermal behavior
8. Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model
9. Physics of semiconductor devices
10. A study on maximum turn-off current of a high-power GTO
11. A quasi 2-dimensional model for thyristor based devices