Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 79-85

  He, Jin ^a   Huang, Ru ^a   Zhang, Xing ^a   Wang, Yang Yuan ^a   Chen, X B ^b  

^a PEKING UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC SPACE CHARGE; NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS;

EDGE ELECTRICAL FIELDS; FLOATING FIELD LIMITING RING;

SEMICONDUCTOR JUNCTIONS;

EID: 0035151535     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00226-4     Document Type: Article

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