On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors

Microelectronics Reliability

Volumn 41, Issue 1, 2001, Pages 31-35

  Magnus, W ^a   Schoenmaker, W ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; QUANTUM THEORY; ULTRATHIN FILMS;

GATE TUNNELING CURRENTS; ULTRA-THIN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS;

CAPACITORS;

EID: 0035151490     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00205-5     Document Type: Article

References (14)

1. Magnus W, Schoenmaker W. Full quantum mechanical model for the charge distribution and the leakage currents in ultra-thin MOS capacitors, submitted for publication.
2. Schenk A. In: S. Selberherr, editor. Advanced physical models for silicon device simulation. Wien: Springer; 1998. p. 281-315.
3. Wettstein A, Schenk A, Fichtner W. Proceedings of the SISPAD'99 Conference, Kyoto, 1999. p. 243.
4. Bardeen J. Tunneling from a many-particle point of view. Phys Rev Lett. 6(2):1961;57-59.
5. Datta S. Electronic transport in mesoscopic systems. Cambridge, MA: Cambridge University Press; 1995. p. 161-3.
6. Ando T., Fowler A.B., Stern F. Re Mod Phys. 54:1982;459-474.
7. Landau LD, Lifshitz EM, Quantum mechanics (non-relativistic theory). London: Pergamon Press; 1958. p. 57-60.
8. Breit G., Wigner E.P. Capture of slow neutrons. Phys Rev. 49:1936;519.
9. Magnus W, Schoenmaker W. Full quantum treatment of charge leakage in MOS capacitors with ultra-thin oxide layers. Proceedings of the ESSDERC'99 Conference, Leuven, 13-15 September, 1999. p. 248-51.
10. Fenton E.W. Phys Rev B. 46:1992;3754.
11. Fenton E.W. Superlatt Microstruct. 16:1994;87.
12. Magnus W., Sala C., De Meyer K. J Appl Phys. 63(8):1988;2704-2710.
13. Magnus W., Sala C., De Meyer K. Phys Stat Sol B. 153:1989;K31-K33.
14. Ghatak A.K., Thyagarajan K., Shenoy M.R. A novel numerical technique for solving the one-dimensional Schrödinger equation using matrix approach - application to quantum well structures. Quant Electron. 24(8):1988;1524-1531.