High-precision determination of atomic positions in 4H- and 6H-SiC crystals

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 217-220

  Bauer, A ^a   Krausslich J ^a   Kuschnerus, P ^a   Goetz, K ^a   Kackell P ^a   Bechstedt, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Polytypes; Quasiforbidden; X ray diffraction

Indexed keywords

APPROXIMATION THEORY; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; FUNCTIONS; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; X RAY CRYSTALLOGRAPHY;

DENSITY FUNCTIONAL THEORY (DFT); LOCAL DENSITY APPROXIMATION (LDA);

SILICON CARBIDE;

EID: 0032661859     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00505-4     Document Type: Article

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