Experimental and theoretical analysis of the carrier distribution in asymmetric multiple quantum-well InGaAsP lasers

IEEE Journal of Quantum Electronics

Volumn 37, Issue 1, 2001, Pages 92-99

  Hamp, Michael J ^a   Cassidy, Daniel T ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; IMAGE ANALYSIS; MIRRORS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ASYMMETRIC MULTIPLE QUANTUM WELL (AMQW) LASERS; CHARGE INJECTION;

QUANTUM WELL LASERS;

EID: 0035127356     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.892730     Document Type: Article

References (21)

1. H. Yamazaki, A. Tomita, and M. Yamaguchi, "Evidence of nonuniform carrier distribution in multiple quantum well lasers," Appl. Phys. Lett., vol. 71, pp. 767-769, 1997.
2. J. F. Hazell, J. G. Simmons, J. D. Evans, and C. Blaauw, "The effect of varying barrier height on the operational characteristics of 1.3-μm strained-layer MQW lasers," IEEE J. Quantum Electron., vol. 34, pp. 2358-2363, 1998.
3. A. Champagne, R. Maciejko, and T. Makino, "Enhanced carrier injection efficiency from lateral current injection in multiple-quantum-well DFB lasers," IEEE Photon. Technol. Lett., vol. 8, pp. 749-751, 1996.
4. G. B. Morrison, D. M. Adams, and D. T. Cassidy, "Extraction of gain parameters for truncated well gain coupled DFB lasers," IEEE Photon. Technol. Lett., Dec. 1999.
5. M. J. Hamp, D. T. Cassidy, B. J. Robinson, Q. C. Zhao, D. A. Thompson, and M. Davies, "Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 1380-1382, 1998.
6. M. J. Hamp, D. T. Cassidy, B. J. Robinson, Q. C. Zhao, and D. A. Thompson, "Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells," Appl. Phys. Lett., vol. 74, pp. 744-746, 1999.
7. _, "Effect of barrier thickness on the carrier distribution in asymmetric multiple quantum well InGaAsP lasers," IEEE Photon. Technol. Lett., Feb. 2000.
8. N. Tessler and G. Eisenstein, "On carrier injection and gain dynamics in quantum well lasers," IEEE J. Quantum Electron., vol. 29, pp. 1586-1595, 1993.
9. X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, "1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability," IEEE Photon. Technol. Lett., vol. 9, pp. 1202-1204, 1997.
10. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995. Appendix K.
11. _, Physics of Optoelectronic Devices. New York: Wiley, 1995, ch. 10.
12. _, Physics of Optoelectronic Devices. New York: Wiley, 1995, ch. 9.
13. LASTIP Reference Manual, Crosslight Software Inc., Gloucester, Canada.
14. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
15. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995, ch. 7.
16. R. Nagarajan, M. Ishikawa, T. Fukushima, D. S. Geels, and J. E. Bowers, "High speed quantum-well lasers and carrier transport effects," IEEE J. Quantum Electron., vol. 28, p. 1990, 1992.
17. R. P. Feynman, R. B. Leighton, and M. Sands, The Feynman Lectures on Physics. Reading, MA: Addison-Wesley, 1965, vol. III, ch. 14.
18. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995, ch. 2.
19. 1-cursive Greek chi As multiple-quantum-well structure," Phys. Rev. B, vol. 38, p. 6160, 1988.
20. 0.75As-GaAs quantum-well lasers," Photon. Technol. Lett., vol. 11, p. 779, 1999.
21. T. Fukushima, T. Namegaya, Y. Ikegami, H. Nakayama, N. Matsumoto, A. Kasukawa, and M. Shibata, "Carrier transport and its effect on the turn on delay time in strained GaInAsP/InP multiple quantum well lasers," Optical Quantum Electron., vol. 26, p. S843, 1994.