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Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 634-638

Aluminum doping of ZnTe grown by MOVPE

(4) Gheyas, Syed Irfan a Hirano, Shinya a Nishio, Mitsuhiro a,b Ogawa, Hiroshi a

a SAGA UNIVERSITY (Japan)

b INSTITUTE FOR MOLECULAR SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSPORT PROPERTIES;

DIETHYLTELLURIUM; DIETHYLZINC; SUBSTRATE TEMPERATURE; TRANSPORT RATE RATIO; ZINC TELLURIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030564297 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00353-4 Document Type: Article

Times cited : (7)

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