DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths

IEEE Electron Device Letters

Volumn 22, Issue 1, 2001, Pages 5-7

  Dumka, D C ^a   Cueva, G ^a   Hier, H ^b   Aina, O A ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Epitaxial Technology LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC FREQUENCY MEASUREMENT; GATES (TRANSISTOR); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CURRENT GAIN CUTOFF FREQUENCY; DEPLETION MODE; DOPED CHANNEL FIELD EFFECT TRANSISTOR; VARIABLE GATE LENGTHS;

FIELD EFFECT TRANSISTORS;

EID: 0035124308     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.892426     Document Type: Article

References (8)

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