Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 308-309

  Lai, L S ^a   Chan, Y J ^a   Pan, J W ^a   Chyi, J I ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

KINK EFFECT;

HETEROJUNCTIONS;

EID: 0032484865     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980200     Document Type: Article

References (8)

1. max', IEEE Electron Device Lett., 1994, 15, pp. 477-479
2. ZHOU, G.-G., FISCMER, C.A., and HARRIS, J.Y.: 'I-V kink in InAlAs/ InGaAs MODFETs due to weak impact ionization process in the InGaAs channel'. Sixth Int Conf. on Indium Phosphide and Related Materials, 1994, pp. 435-438
3. T', IEEE Electron Device Lett., 1991, 12, pp. 483-485
4. ENOKI, T., ARAI, K., KOHZEN, A., and JSHII, Y.: 'Design and characteristics of InGaAs/InP composite-channel HFET's, IEEE Trans. Electron Devices, 1995, 42, (8), pp. 1413-1418
5. 0.5P spacer layer,' Electron. Lett., 1994, 30, (2), pp. 169-170
6. 0.47As (0 ≤ x ≤ 1) heterojunction of its application on HEMTs', IEEE Trans. Electron Devices, 1997, 44, (5), pp. 708-714
7. 0.47As (x = 0.1, 0.2) quaternary channel', Electron. Lett., 1997, 33, (20), pp. 1739-1748
8. YANG, M.T., and CHAN, Y.J.: 'Device linearity comparison between doped-channel and modulation doped design in pseudomorphic Al0.3Ga0.70As/In0.2Ga0.8As heterostructures', IEEE Trans. Electron Devices, 1996, 43, (8), pp. 1174-1180