Base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 79, Issue 1, 2001, Pages 63-67

  Lee, Jong Min ^a   Lee, Tae Woo ^b   Park, Sung Ho ^b   Min, Byoung Gue ^b   Park, Moon Pyung ^b   Lee, Kyung Ho ^b   Choi, In Hoon ^a  

^a Korea University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

BASE CONTACT RECOMBINATION CURRENTS; EMITTER-BASED CONTACT SPACING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035091708     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00557-2     Document Type: Article

References (15)

1. Zwicknagl P., Schaper U., Schleicher L., Siweris H., Bachem K.H., Lauterbach T., Pletshen W. Electron. Lett. 28:1992;327.
2. Lee T.-W., Park S.H., Lee J.-M., Min B.-G., Park M.-P., Song J.-H. J. Korean Phys. Soc. 35:1999;S1080.
3. Liu W., Kim T., Khatizbadeh A. IEEE Microw. Guid. Wave Lett. 4:1994;14.
4. Kobayashi T., Taira K., Nakamura F., Kawai H. J. Appl. Phys. 65:1989;4898.
5. Faleh M.S., Tasselli J., Bailbe J.P., Marty A. Appl. Phys. Lett. 69:1996;1288.
6. Masum J., Hall T.J. Semicond. Sci. Technol. 12:1997;1202.
7. Liou J.J., Yuan J.S. Solid State Electron. 35:1992;805.
8. Jeong J.-O., Lee H.-Y., Lee T.-W., Park M.-P., Park S.-H., Pyun K.-E. J. Korean Phys. Soc. 29:1996;526.
9. Nakajima O., Nagata K., Ito H., Ishibashi T., Sugeta T. Jpn. J. Appl. Phys. 24:1985;1368.
10. Nakajima O., Nagata K., Ito H., Ishibashi T., Sugeta T. Jpn. J. Appl. Phys. 24:1985;L596.
11. Ito H., Nakajima O., Nagata K., Makimura T., Ishibashi T. Jpn. J. Appl. Phys. 32:1993;L1500.
12. J.J. Liou, Principles and Analysis of AlGaAs Heterojunction Bipolar Transistors, Artech House, 1996, p. 133.
13. Lee W.-S., Ueda D., Ma T., Pao Y.-C., Harris J.S. IEEE Electron Device Lett. 10:1989;200.
14. Liu W., Harris J.S. Jpn. J. Appl. Phys. 31:1992;2349.
15. Hsin Y.M., Asbeck P.M. Solid State Electron. 44:2000;587.