Radiation effects on branching polysilanes

Radiation Physics and Chemistry

Volumn 60, Issue 4-5, 2001, Pages 461-466

  Maeda, Kensaku ^a   Seki, Shu ^a   Tagawa, Seiichi ^a   Shibata, Hiromi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; GELS; ION BEAMS; IRRADIATION; SILICON;

CROSSLINKING REACTIONS;

POLYSILANES;

DIMETICONE; POLYMER; SILICON;

CHEMICAL STRUCTURE; CONFERENCE PAPER; CROSS LINKING; DENSITY; ENERGY; GAMMA RADIATION; GEL; RADIATION BEAM; RADIATION RESPONSE; RADIOLYSIS;

EID: 0035087951     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(00)00417-5     Document Type: Conference Paper

References (12)

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5. Positive-negative inversion of silicon based resist materials: Poly(di-n-hexylsilane) for ion beam irradiation
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7. Ion beam induced crosslinking reactions in poly(di-n-hexylsilane)
8. Electronic structure of radical anions and cations of polysikanes with structural defects
9. Lithographic, photochemical and O2 RIE properties of three polysilane copolymers
10. Organogermane homopolymer and copolymers with organosilanes
11. Structural photophysical and conductive properties of n-hexyl substituted hybrid polysilylene-polysilyne networks
12. Self-developing polysilane deep-UV resists - Photochemistry, photophysics, and submicron lithography