Effects of annealing of (Ba,Sr)RuO3 bottom electrodes on the electrical properties of (Ba,Sr)TiO3 thin films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 281-285

  Park, Kyung Woong ^a   Park, Jeong Hee ^a   Oh, Se Hoon ^a   Kim, Boum Seock ^a   Chung, Yong Chae ^a   Choi, Duck Kyun ^a   Yoo, Cha Young ^b   Park, Young Wook ^b   Lee, Sang In ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ELECTRODES; LEAKAGE CURRENTS; NITROGEN; OXYGEN; RUTHENIUM COMPOUNDS; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

BOTTOM ELECTRODES;

SEMICONDUCTING FILMS;

EID: 0035087935     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1333079     Document Type: Article

References (12)

1. J. F. Scott, L. Kammerdiner, M. Parris, S. Tryner, and V. Ottenbacher, J. Appl. Phys. 64, 787 (1988).
2. S. H. Pack, J. H. Won, K. S. Lee, J. S. Choi, and C. S. Park, Jpn. J. Appl. Phys., Part 1 35, 5757 (1996).
3. J. H. Joo, Y. C. Jeon, J. M. Seon, K. Y. Oh, J. S. Roh, and J. J. Kim, Jpn. J. Appl. Phys., Part 1 36, 4382 (1997).
4. N. Ichinose and T. Ogiwara, Jpn. J. Appl. Phys., Part 1 34, 5198 (1995).
5. K. Takemura, T. Sakuma, S. Matsubara, S. Yamamichi, H. Yamaguchi, and Y. Miyasaka, Proceedings of the Fourth International Symposium Integrated Ferroelectrics (1992), p. 481.
6. J. S. Lee, H. J. Kwon, Y. W. Jeong, H. H. Kim, K. H. Park, and C. Y. Kim, Ferroelectr. Thin Film V 175 (1996).
7. J. H. Ahn, W. Y. Choi, W. J. Lee, and H. G. Kim, Jpn. J. Appl. Phys., Part 1 37, 284 (1988).
8. L. H. Parker and A. F. Tasch, IEEE Circuits Devices Mag. 17 (1990).
9. S. Y. Son, B. S. Kim, D. K. Choi, C. Y. Yoo, S. I. Lee, Z. R. Dai, and F. S. Ohuchi, J. Mater. Sci. (in press).
10. D. K. Choi, B. S. Kim, S. Y. Son, S. H. Oh, and K. W. Park, J. Appl. Phys., Part 1 86, 3347 (1999).
11. C. S. Hwang, S. O. Park, H. J. Cho, C. S. Kang, H. K. Kang, S. I. Lee, and M. Y. Lee, Appl. Phys. Lett. 67, 2819 (1995).
12. C. S. Hwang and S. H. Joo, J. Appl. Phys. 85, 2431 (1999).