Planar-type ferromagnetic tunnel junctions fabricated by atomic force microscope for nonvolatile memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 128-129

  Takemura, Yasushi ^a   Shirakashi, Jun Ichi ^b  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b AKITA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

Atomic force microscope; Coulomb blockade; Ferromagnetic thin film; Magnetic random access memory; Nano structure; Single electron transistor; Spin tunnel junction; Tunneling magnetoresistance

Indexed keywords

ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; MAGNETIC RECORDING; MAGNETIC THIN FILMS; MAGNETORESISTANCE; NANOSTRUCTURED MATERIALS; THIN FILM TRANSISTORS;

FERROMAGNETIC THIN FILMS; NONVOLATILE MEMORY; SINGLE ELECTRON TRANSISTORS;

TUNNEL JUNCTIONS;

EID: 0035056405     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.128     Document Type: Article

References (15)