A nonvolatile ferroelectric memory device with a floating gate

Applied Physics Letters

Volumn 69, Issue 21, 1996, Pages 3275-3276

  Chen, F Y ^a   Fang, Y K ^a   Sun, M J ^a   Chen, Jiann Ruey ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042647266     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118034     Document Type: Article

References (5)

1. D. Bondurant and F. Gnadinger, IEEE Spectr. July, 30 (1989).
2. C. Kittel, Introduction to Solid State Physics, 6th ed. (Wiley, New York, 1991), Chap. 13.
3. M. Okayama and Y. Hamakawa, Ferroelectrics 63, 243 (1985).
4. Y. Matsui, Ph.D. Dissertation, Osaka University, 1982.
5. J. P. Uyemura, Fundamentals of MOS Digital Integrated Circuits (Addison-Wesley, Reading, MA, 1988), Chap. 1, p. 21.