Low-energy positrons at the Si(100)-2×1 surface with adsorbed hydrogen and oxygen

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 451-453

  Fazleev, N G ^a,b   Fry, J L ^a   Weiss, A M ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b KAZAN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

Annihilation; Auger; Hydrogen; Oxygen; Positron; Silicon; Surface

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; CALCULATIONS; ELECTRON ENERGY LEVELS; HYDROGEN; OXYGEN; PROBABILITY; SEMICONDUCTING SILICON; SURFACES;

ANNIHILATION PROBABILITY; POSITRON ANNIHILATION INDUCED AUGER ELECTRON SPECTROSCOPY; POSITRON SURFACE STATE WAVE FUNCTION;

POSITRONS;

EID: 0035023114     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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