Local-field-enhancement model of DRAM retention failure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 157-160

  Hiraiwa, A ^a   Ogasawara, M ^a   Natsuaki, N ^a   Itoh, Y ^a   Iwai, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; FAILURE ANALYSIS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR STORAGE;

LOCAL-FIELD-ENHANCEMENT MODEL;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0032284229     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)