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Volumn 302-303, Issue , 2001, Pages 334-341

Influence of group II and III shallow acceptors on the gain of p-Ge lasers

(7) Auen, Karsten a Hübers, Heinz Wilhelm a Muravjov, Andrei b Orlova, Ekaterina b Pavlov, Sergei a,b Shastin, Valery b Zhukavin, Roman b

a GERMAN AEROSPACE CENTER DLR (Germany)

b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES (Russian Federation)

Author keywords

Far infrared; Germanium; Laser; Shallow acceptor

Indexed keywords

GAIN CONTROL; IMPURITIES; LIGHT ABSORPTION; LIGHT EMISSION; SEMICONDUCTING GERMANIUM;

FAR-INFRARED LASERS; SHALLOW ACCEPTORS;

SEMICONDUCTOR LASERS;

EID: 0034977017 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00449-5 Document Type: Conference Paper

Times cited : (3)

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