Actively mode-locked p-Ge laser in Faraday configuration

Applied Physics Letters

Volumn 75, Issue 19, 1999, Pages 2882-2884

  Muravjov, A V ^a   Withers, S H ^a   Strijbos, R C ^a   Pavlov, S G ^b   Shastin, V N ^b   Peal, R E ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001401248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125179     Document Type: Article

References (6)

1. Special Issue on Far-infrared Semiconductor Lasers, edited by E. Gornik and A. A. Andronov, Opt. Quantum Electron. 23, (1991).
2. J. N. Hovenier, A. V. Muravjov, S. G. Pavlov, V. N. Shastin, R. C. Strijbos, and W. Th. Wenkebach, Appl. Phys. Lett. 71, 443 (1997).
3. J. N. Hovenier, T. O. Klaassen, W. Th. Wenckebach, A. V. Muravjov, S. G. Pavlov, and V. N. Shastin, Appl. Phys. Lett. 72, 1140 (1998).
4. A. V. Muravjov, R. C. Strijbos, C. J. Fredricksen, H. Weidner, W. Trimble, A. Jamison, S. G. Pavlov, V. N. Shastin, and R. E. Peale, in Radiative Processes and Dephasing in Semiconductors, OSA-TOPS, Vol. 18, edited by D. Citron (OSA, Washington, DC, 1998), pp. 102-107.
5. A. V. Muravjov, R. C. Strijbos, C. J. Fredricksen, S. H. Withers, W. Trimble, S. G. Pavlov, V. N. Shastin, and R. E. Peale, Appl. Phys. Lett. 74, 167 (1999).
6. R. C. Strijbos, J. G. S. Lok, and W. Th. Wenckebach, J. Phys.: Condens. Matter 6, 7461 (1994).