Double acceptor doped Ge: A new medium for inter-valence-band lasers

Applied Physics Letters

Volumn 68, Issue 22, 1996, Pages 3075-3077

  Brundermann E ^a   Linhart, A M ^a   Reichertz, L ^a   Roser H P ^a   Dubon, O D ^b   Hansen, W L ^b   Sirmain, G ^b   Haller, E E ^b  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; BINDING ENERGY; CRYSTALS; HALL EFFECT; INFRARED RADIATION; LASER BEAMS; LIGHT REFLECTION; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; ZINC;

CONTINUOUS WAVE PROPAGATION; HALL EFFECT MEASUREMENT; INTERNAL REFLECTION MODES; LASER CRYSTALS;

SEMICONDUCTING GERMANIUM;

EID: 0030146999     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116427     Document Type: Article

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