20-Gb/s 14-kΩ transimpedance long-wavelength MSM-HEMT photoreceiver OEIC

IEEE Photonics Technology Letters

Volumn 10, Issue 5, 1998, Pages 710-712

  Lao, Z ^a,b,c   Hurm, V ^b   Bronner, W ^b   Hulsmann A ^b   Jakobus, T ^a,b   Kohler K ^b   Ludwig, M ^b   Raynor, B ^b   Rosenzweig, J ^b   Schlechtweg, M ^a,b   Thiede, A ^a,b  

^a IEEE   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c Rockwell Semiconductor Systems ^*  (United States)

Author keywords

1.3 1.55 m wavelength; HEMT IC's; Limiting amplifier; MSM photodetector; OEIC; Optical fiber links; Photoreceiver; Transimpedance amplifier

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; INTEGRATED CIRCUIT LAYOUT; INTEGRATED OPTOELECTRONICS; OPTICAL COMMUNICATION EQUIPMENT; OPTICAL FIBERS; OPTICAL LINKS;

LIMITING AMPLIFIERS; METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; PHOTORECEIVERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032073067     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.669340     Document Type: Article

References (5)

1. R. A. Metzger, "OEIC photoreceivers," Compound Semiconductor, pp. 18-20, Jan./Feb. 1996.
2. Y. Mihashi, K. Goto, E. Ishimura, M. Miyashita, T. Shimura, H. Nishiguchi, T. Kimura, T. Shiba, and E. Omura, "Long-wavelength receiver optoelectronic integrated circuit on 3-inch-diameter GaAs substrate grown by InP-on-GaAs heteroepitaxy," Jpn. J. Appl. Phys., vol. 33, pt. 1, no. 5A, pp. 2599-2604, 1994.
3. V. Hurm, W. Benz, W. Bronner, T. Fink, T. Jakobus, G. Kaufei, K. Köhler, Z. Lao, M. Ludwig, C. Moglestue, B. Raynor, J. Rosenzweig, M. Schlechtweg, and A. Thiede, "Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs," in Tech. Dig. IEEE GaAs IC Symp., 1997, pp. 197-200.
4. Z. Lao, M. Berroth, V. Hurm, A. Thiede, R. Bosch, P. Hofmann, A. Hülsmann, C. Moglestue, and K. Köhler, "25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier IC's using AlGaAs/GaAs-HEMT's," in Dig. Tech. IEEE Int. Solid-State Circuits Conf., 1997, pp. 356-357.
5. T. Jakobus, W. Bronner, P. Hofmann, A. Hülsmann, G. Kaufel, K. Köhler, B. Landsberg, B. Raynor, J. Schneider, N. Grün, J. Windscheif, M. Berroth, and J. Hornung, "Stability of an AlGaAs/GaAs/AlGaAs E/D-HEMT process with double pulse doping," in Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. no. 129, 1992, vol. 11, pp. 887-892.