Visible-light emitting diodes based on microcavity concepts

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4278, Issue , 2001, Pages 50-60

  Dumitrescu, M ^a   Saarinen, M ^a   Vilokkinen, V ^a   Sipila, P ^a   Guina, M ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

All solid source MBE; High bandwidth; High efficiency; Modeling; POF; RC LED; Red emission

Indexed keywords

BANDWIDTH; CAVITY RESONATORS; DATA COMMUNICATION SYSTEMS; OPTICAL COMMUNICATION; OPTICAL FIBERS; POLYMETHYL METHACRYLATES; QUANTUM EFFICIENCY;

RESONANT MICROCAVITY LIGHT EMITTING DIODES (RC-LED);

LIGHT EMITTING DIODES;

EID: 0034938745     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.426832     Document Type: Conference Paper

References (14)

1. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers
2. Improved AlGaInP-based red (670-690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design
3. Impact of planar microcavity effects on light extraction - Part I: Basic concepts and analytical trends
4. Resonant cavity light-emitting diodes: Modeling, design and optimization
5. Impact of planar microcavity effects on light extraction - Part II: Exact simulations and role of photon recycling
6. Modelling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
7. All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors
8. 0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy
9. AlGaInP visible laser diodes grown on misoriented substrates
10. Growth of GaInP on misoriented substrates using solid source MBE
11. Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid source molecular beam epitaxy
12. Temperature behaviour of resonant cavity light-emitting diodes at 650nm
13. Influence of deep level impurities on modulation response of InGaP light emitting diodes
14. Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy