Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 19, 2001, Pages

  Ohtake, Akihiro ^a,g   Nakamura, Jun ^b,h   Terauchi, Masami ^c   Sato, Futami ^c   Tanaka, Michiyoshi ^c   Kimura, Kozo ^a,d,i   Yao, Takafumi ^a,e,f  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b RIKEN   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d JRCAT Angstrom Technology Partnership (ATP)   (Japan)

^e NATL INST FOR ADV INTERDISC RES   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

^g NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^h UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

ⁱ Sumitomo Electric Systems   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SELENIUM; ZINC;

ARTICLE; CALCULATION; ELECTRICITY; FILM; SEMICONDUCTOR; STRUCTURE ANALYSIS; SURFACE PROPERTY;

EID: 0034907664     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.195325     Document Type: Article

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