Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1711-1715

  Lin, W ^a   Tamargo, M C ^a   Wei, H Y ^b   Sarney, W ^b   Salamanca Riba, L ^b   Fitzpatrick, B J ^c  

^a CITY COLLEGE OF NEW YORK   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c Optical Semiconductors   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); ENERGY GAP; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DONOR-ACCEPTOR-PAIR EMISSIONS; EPILAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034186910     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591458     Document Type: Article

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