The design of CMOS transimpedance amplifier based on BSIM large-signal model

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 165-168

  Kuo, C W ^a   Hsiao, C C ^a   Yang, S C ^a   Chan, Y J ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MICROWAVE AMPLIFIERS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

CAPACITIVE PEAKING; LARGE SIGNAL MODEL; MICROWAVE BEHAVIORS; TRANSIMPEDANCE AMPLIFIER;

CMOS INTEGRATED CIRCUITS;

EID: 0034875334     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Fiber-optic multigigabit GaAs MIC front-end circuit with inductor peaking
2. Broad-band GaAs monolithic equalizing amplifier for multigigabit-per-second optical receivers
3. Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design
4. A MODFET-based optoelectronic integrated circuit receiver for optical interconnects
5. Monolithically integrated InP-based front-end photoreceivers
6. A 6.8 GHz monolithic oscillator fabricated by 0.35 mm CMOS technologies