Die cracking evaluation and improvement in ULSI plastic package

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2001, Pages 239-244

  Chou, K Y ^a   Chen, M J ^a   Lin, C C ^a   Su, Y S ^a   Hou, C S ^a   Ong, T C ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; INTEGRATED CIRCUIT TESTING; MICROPROCESSOR CHIPS; RELIABILITY; THERMAL CYCLING;

DIE CRAKING; THERMAL SHOCK TESTING; THERMO-MECHANICAL STRESSES;

ULSI CIRCUITS;

EID: 0034874016     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. Temperature-cycling acceleration factors for aluminum metallization failure in VLSI applications
2. Stress-induced deformation of aluminum metallization in plastic molded semiconductor devices
3. Thermal stress and relaxation behavior of Al(Cu) submicron interconnects
4. Shear stress evaluation of plastic packages
5. Failure rate model for thin film cracking in plastic ICs
6. Effect of material interactions during thermal shock testing on IC package reliability
7. Effects of die coatings, mold compounds, and test conditions on temperature cycling failures
8. A test chip design for detecting thin-film cracking in integrated circuits
9. Temperature cycling and thermal shock failure rate modeling
10. Three-dimensional die surface stress measurement in delaminated and non-delaminated plastic packages
11. Die surface stress variation during thermal cycling and thermal aging reliability tests